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JCSE, vol. 8, no. 3, pp.129-136, September, 2014


Circuit Modelling and Eigenfrequency Analysis of a Poly-Si Based RF MEMS Switch Designed and Modelled for IEEE 802.11ad Protocol

Tejinder Singh, Farzaneh Pashaie
Discipline of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, Punjab, India / Department of Mechatronics, Islamic Azad University, South Branch, Tehran, Iran

Abstract: This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20?100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.

Keyword: RF MEMS; Equivalent circuit modelling; Eigenfrequency analysis; Capacitive switch; Millimeter wave frequencies

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