JCSE, vol. 8, no. 3, pp.129-136, September, 2014
Circuit Modelling and Eigenfrequency Analysis of a Poly-Si Based RF MEMS Switch Designed and Modelled for IEEE 802.11ad Protocol
Tejinder Singh, Farzaneh Pashaie
Discipline of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, Punjab, India / Department of Mechatronics, Islamic Azad University, South Branch, Tehran, Iran
Abstract: This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio
frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane
for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance,
on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element
modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which
indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band.
The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency
sweep of 20?100 GHz. The proposed switch has various applications in satellite communication networks and can also
be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.
RF MEMS; Equivalent circuit modelling; Eigenfrequency analysis; Capacitive switch; Millimeter wave frequencies
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